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铜溅射靶材在电子信息、集成电路等行业发挥着重要作用，是应用最多的金属靶材之一。可分为高纯铜靶材和铜合金靶材两类，其技术要求主要包括纯度、晶粒尺寸、晶粒取向、致密度等。制备流程主要包括，铸造法或粉末冶金法制坯，利用锻造、轧制、热处理等环节进行靶材性能调控，以提高靶材的综合性能。本文主要阐述了铜溅射靶材的两种基本类型及相关应用，论述了其主要技术要求、两种靶材制坯方法及有关靶材性能调控方法，对铜溅射靶材的发展方向进行了总结展望。
Abstract：Copper sputtering targets play a significant role in industries such as electronic information and integrated circuits, being one of the most widely used metal targets. They can be categorized into two types: high purity copper targets and copper alloy targets. The technical requirements mainly include aspects such as purity, grain size, grain orientation, and density. The purity of the copper target is of paramount importance. Generally, a higher purity level directly correlates with superior comprehensive properties of the deposited thin film, such as enhanced electrical conductivity and improved structural integrity. The grain size must be controlled within an optimal range. When the grain size is appropriate, it results in lower plasma impedance during the sputtering process. This phenomenon leads to a higher deposition rate, and improved uniformity of the film thickness across the substrate. Furthermore, grain orientation significantly influences the sputtering rate and can affect the consistency of the film's thickness uniformity. Lastly, higher density is typically more advantageous for obtaining high-quality films, as it minimizes structural defects like micro-porosity, which can cause arcing and the generation of particles during sputtering, thereby compromising film quality. To meet these rigorous specifications, the copper metal used for sputtering targets must undergo sophisticated purification processes. Several techniques are employed for this purpose, including electrolytic refining, zone melting, and anion exchange methods. The manufacturing workflow for copper sputtering targets involves several critical stages. It begins with the preparation of a blank billet, which can be accomplished through either casting or powder metallurgy techniques. Following billet preparation, a series of thermo-mechanical processing steps are employed to precisely control and enhance the target's final properties. These steps typically involve forging, rolling, and heat treatment, all designed to refine the microstructure and achieve the desired performance characteristics. This article provides a comprehensive examination of copper sputtering targets. It elaborates on the two basic types and their associated applications, discusses the principal technical requirements in detail, outlines the purification technologies for copper intended for sputtering, describes the two primary billet manufacturing methods, and explains the relevant approaches for property regulation. Finally, the article concludes with a summary and prospective outlook on the future developmental directions for copper sputtering targets. Looking ahead, as China's manufacturing capabilities in high-end copper targets advance rapidly, and driven by the escalating quality demands from downstream industries, future breakthroughs are anticipated in the development of ultra-high-purity copper targets, high-performance copper alloy targets, and large-size copper targets to meet the needs of next-generation applications.
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基本信息:
DOI：10.20237/j.issn.1007-7545.2026.01.009
中图分类号:TG146.11
引用信息:
[1]刘硕,宋谨博,张树辉,等.铜溅射靶材制备技术现状与发展趋势[J].有色金属(冶炼部分),2026(01):78-90.DOI:10.20237/j.issn.1007-7545.2026.01.009.
基金信息:
湖北省中央引导地方科技发展专项(2024EIA015); 湖北省重点研发计划项目(2023BAA030); 湖北省自然科学基金资助项目(2024AFB242); 河南省科技攻关项目(252102321175)~~
2025-09-26
2025
2025-10-24
2025-10-27
2025
1
2026-01-04
2026-01-04